发明名称 |
METHOD OF MANUFACTURING DUAL DAMASCENE WIRING |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing dual damascene wiring that is capable of securing the profile of a reliable trench. SOLUTION: A method of manufacturing dual damascene wiring comprises: a step (a) of forming lower wiring on a substrate; a step (b) of forming an insulating film on the lower wiring; a step (c) of forming a hard mask on the insulating film; a step (d) of forming a via in the insulating film by using the hard mask as an etching mask; a step (e) of repatterning the hard mask to use it as a trench hard mask defining a trench which is coupled to the via and in which wiring is formed; a step (f) of forming the trench, which is coupled to the via and in which wiring is formed, by etching a portion of the insulating film through utilization of the trench hard mask as an etching mask; a step (g) of removing the trench hard mask by wet etching; and a step (h) of forming wiring by filling the trench and the via with a wiring material. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006041519(A) |
申请公布日期 |
2006.02.09 |
申请号 |
JP20050210436 |
申请日期 |
2005.07.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
OH HYEOK-SANG;TEI SHUKAKU;KIM IL-GOO |
分类号 |
H01L21/768;H01L21/306;H01L21/3065 |
主分类号 |
H01L21/768 |
代理机构 |
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