发明名称 THIN FILM SURFACE ACOUSTIC WAVE DEVICE, ITS MANUFACTURING METHOD, AND HYBRID INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin film surface acoustic wave device for preventing the damage of a board circuit by a surface acoustic wave element forming process and reducing variation in a parasitic capacity, and to provide a method for manufacturing the device, and a hybrid integrated circuit device. SOLUTION: The thin film surface acoustic wave device 100 comprises a board 101 with a circuit 110 formed in one front layer part; a piezoelectric body thin film 104 which is formed on the board at the opposite side of the one surface layer part; and electrodes 105Ax, 105Ay, 105B which are formed on the front surface of the piezoelectric body thin film 104. The electrodes 105As, 105Ay, and 105B are connected by conduction with the circuit 110 via at least wiring 113 which passes on the side surface of the board 101. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006042116(A) 申请公布日期 2006.02.09
申请号 JP20040221381 申请日期 2004.07.29
申请人 SEIKO EPSON CORP 发明人 FURUHATA MAKOTO
分类号 H03H9/25;H03H3/08;H03H9/145 主分类号 H03H9/25
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