| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency circuit capable of simply and appropriately adjusting impedance matching after forming a semiconductor device in a substrate. SOLUTION: A high frequency circuit 40 is provided with a field-effect transistor 6 and matching circuits 2, 3 and 4. The field-effect transistor 6 comprises a semiconductor substrate 8 including a channel domain 18, a source region 10 and a drain region 11 which estrange each other in-between the channel region 18 and are formed in the surface of the semiconductor substrate 8, a body region 9 constituted by semiconductor substrate 8 directly under the channel region 18, a source electrode 14 connected to the source region 10, a drain electrode 15 connected to the drain region 11, a body electrode 16 connected to the body region 9, and a gate electrode 13 arranged on the channel region 18. The matching circuits 2, 3 and 4 are connected to each of the source electrode 14, the drain electrode 15, and the gate electrode 13. For impedance matching, bias voltage is impressed to the body electrode 16. COPYRIGHT: (C)2006,JPO&NCIPI
|
