| 摘要 |
PROBLEM TO BE SOLVED: To improve mobility of a carrier in a pMISFET and an nMISFET. SOLUTION: A semiconductor device has a CMISFET comprising an nMISFET and a pMISFET. The nMISFET comprises a first gate electrode 14b and a first spacer 15, including compression stress formed on the side face of this first gate electrode. The pMISFET comprises a second gate electrode 14a and a second spacer 16 of which compression stress is smaller than that of the first spacer 15, formed on a side face of this second gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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