| 摘要 |
PROBLEM TO BE SOLVED: To restrain generation of damage layer at the side wall of a trench or via-hole of the damascene wiring, and also to restrain generation of voids in the porous Low-k film. SOLUTION: A first interlayer insulating film 2 laminating a first etching stopper layer 2a, a porous first dielectric constant film 2b, a first cap layer 2c, is formed on a lower layer wiring 1, and a via-hole 4 is also formed with the dry etching method using a resist mask 3 by utilizing a fluorocarbon gas including a large amount of carbon such as C<SB>4</SB>F<SB>8</SB>. Next, the first etching stopper layer 2a is removed with the etching process by setting pressure of the etching gas to the scope of 0.1 to 6.0 Pa by defining the first cap layer 2c as a hard mask and using the mixed gas of CF<SB>4</SB>/Ar/N<SB>2</SB>or CHF<SB>3</SB>/Ar/N<SB>2</SB>as the etching gas and the via-hole 4 is provided as the through-hole reaching the surface of the lower layer wiring 1. COPYRIGHT: (C)2006,JPO&NCIPI
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