发明名称 |
Dielectric layer created using ALD to deposit multiple components |
摘要 |
A dielectric layer is created for use with non-volatile memory and/or other devices. The dielectric layer is created using atomic layer deposition to deposit multiple components whose mole fractions change as a function of depth in the dielectric layer in order to create a rounded bottom of a conduction band profile for the dielectric layer.
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申请公布号 |
US2006027882(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050224599 |
申请日期 |
2005.09.12 |
申请人 |
MOKHLESI NIMA |
发明人 |
MOKHLESI NIMA |
分类号 |
H01L29/94;G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;H01L29/788 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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