METHOD FOR CORRECTING MASK PATTERN DATA

摘要

PROBLEM TO BE SOLVED: To provide a method for correcting data for drawing a mask pattern, which can be generally and practically used by determining the correction amount of an auxiliary pattern as the drawing data so as to improve the squareness of a mask pattern in the manufacture of a photomask employing a drawing apparatus using a charged beam such as an electron beam.

SOLUTION: The method includes the steps of: forming a resist pattern by using drawing data before inserting an auxiliary pattern; measuring the dimension of the resist pattern; dry etching a photomask blank having the resist pattern laid thereon to form a light shielding film pattern; measuring the dimension of the light shielding film pattern; calculating the difference between the resist pattern dimension and the light shielding film pattern dimension; and preparing drawing data by inserting the auxiliary pattern having a dimension of one side line half the difference of the pattern dimension above calculated.

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