| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the contamination by particles by suppressing the formation of an electric field around an electrostatic chuck. <P>SOLUTION: In the electrostatic chuck 100, a conductive film 10 is formed on the surface of the electrostatic chuck 100 except for an attraction surface 5, and is electrically grounded by a grounding portion 11. By applying voltage between an internal electrode 3 and a wafer W to be attracted, there is electrostatic force appearing between them and the wafer W is attracted to the electrostatic chuck 100. At that time, the potential around the electrostatic chuck 100 becomes nearly zero due to the grounded conductive film 10, and so the formation of an electric field which attracts particles is suppressed, resulting in preventing the attachment of particles to the wafer W. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
