| 发明名称 |
Integrating n-type and p-type metal gate transistors |
| 摘要 |
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
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| 申请公布号 |
US2006030104(A1) |
申请公布日期 |
2006.02.09 |
| 申请号 |
US20050248737 |
申请日期 |
2005.10.11 |
| 申请人 |
DOCZY MARK;BRASK JUSTIN K;KEATING STEVEN J;BARNS CHRIS E;DOYLE BRIAN S;MCSWINEY MICHAEL L;KAVALIEROS JACK T;BARNAK JOHN P |
发明人 |
DOCZY MARK;BRASK JUSTIN K.;KEATING STEVEN J.;BARNS CHRIS E.;DOYLE BRIAN S.;MCSWINEY MICHAEL L.;KAVALIEROS JACK T.;BARNAK JOHN P. |
| 分类号 |
H01L21/336;H01L21/3213;H01L21/8238;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
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