发明名称 Coupled cavity high power semiconductor laser
摘要 An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first ("active") resonator cavity of a high power coupled cavity surface emitting laser device. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the active cavity but is contained within a second ("passive") resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. In one embodiment, non-linear optical material inside each passive cavity of an array converts an IR fundamental wavelength of each laser device to a corresponding visible harmonic wavelength, and the external output cavity mirror comprises a Volume Bragg grating (VBG) or other similar optical component that is substantially reflective at the fundamental frequency and substantially transmissive at the harmonic frequency. The VBG used in an array of such devices may be either flat, which simplifies registration and alignment during manufacture, or may be configured to narrow the IR spectrum fed back into the active resonant cavity and to shape the spatial mode distribution inside the cavity, thereby reducing the size of the mode and compensating for any deformations in the semiconductor array.
申请公布号 US2006029120(A1) 申请公布日期 2006.02.09
申请号 US20050136071 申请日期 2005.05.23
申请人 发明人 MOORADIAN ARAM;SHCHEGROV ANDREI;ANIKITCHEV SERGEI
分类号 H01S3/08;H01S5/00 主分类号 H01S3/08
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