| 摘要 |
A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third electrode surrounding the second electrode in the same plane, a fourth electrode surrounding the third electrode in the same plane, a first gate electrode insulated from the first through fourth electrodes and arranged on another plane separate from the first through fourth electrodes to correspond to a space between the first electrode and the second electrode, a second gate electrode insulated from the first through fourth electrodes and arranged on yet another plane separate from the plane of the first through fourth electrodes to correspond to a space between the third electrode and the fourth electrode, and a semiconductor layer insulated from the first gate electrode and the second gate electrode and contacting the first through fourth electrodes.
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