发明名称 |
Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same |
摘要 |
A depletion mode (D-mode) field effect transistor (FET) is monolithically integrated with an enhancement mode (E-mode) FET in a multi-layer structure. The multi-layer structure includes a channel layer overlaid by a barrier layer overlaid by an ohmic contact layer. Source and drain contacts of the D-mode and E-mode FETs are coupled to the ohmic contact layer. A gate contact of the D-mode and E-mode FETs is coupled to the barrier layer. An amorphized region is provided beneath the E-mode gate contact within the barrier layer. The amorphized region forms a buried E-mode Schottky contact with the barrier layer. An alternative embodiment couples the gate contact of the D-mode transistor to a first layer that overlies the barrier layer, and provides a similar D-mode amorphized region within the first layer.
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申请公布号 |
US2006027840(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050248935 |
申请日期 |
2005.10.11 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
WOHLMUTH WALTER A. |
分类号 |
H01L29/80;H01L21/8234;H01L21/8252;H01L27/06;H01L27/088 |
主分类号 |
H01L29/80 |
代理机构 |
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地址 |
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