GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER

摘要

A multi-junction solar cell includes a silicon solar subcell, a GaInP solar subcell, and a GaAs solar subcell located between the silicon solar subcell and the GaInP solar subcell. The GaAs solar subcell is bonded to the silicon solar subcell such that a bonded interface exists between these subcells.