| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor FET in which ON current increases, ON/OFF ratio increases and short circuit is hard to be generated between a source electrode and a drain electrode. SOLUTION: This FET comprises a source electrode 14, a drain electrode 16, a gate electrode 12 and a semiconductor 15 containing an organic matter. The semiconductor 15 comprises a first layer 151 having a first conductivity and a second layer 152 having a second conductivity. The first layer 151 is electrically in contact with at least one electrode selected out from the source electrode 14 and the drain electrode 16. The first conductivity is made higher than the second conductivity. COPYRIGHT: (C)2006,JPO&NCIPI
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