SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a superior readout current driving force even when a memory call is reduced. SOLUTION: In the nonvolatile semiconductor memory device having a split gate structure, a memory gate is formed on a protruding type substrate, and its side surface is used as a channel. COPYRIGHT: (C)2006,JPO&NCIPI