发明名称 |
Semiconductor device with gate space of positive slope and fabrication method thereof |
摘要 |
Embodiments of the invention provide a semiconductor device and a fabrication method for a semiconductor device that includes the processes of forming multiple gates on a silicon substrate, forming a gate spacer having a positive slope at the gate spacer edge, depositing a polysilicon layer on the silicon substrate between the gates, etching a portion of the polysilicon layer to form an opening exposing a portion of the silicon substrate, and forming an inter-insulation layer to the exposed portion of the silicon substrate to fill the opening. Using an annealing process applied to a layer in the gate spacer, the etch selectivity can be selectively controlled and consequently, the degree of slope at the gate spacer edge is predetermined.
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申请公布号 |
US2006027875(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050249096 |
申请日期 |
2005.10.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HUHN;JEONG MUN-MO;KIM WOOK-JE |
分类号 |
H01L21/336;H01L29/94;H01L21/8234;H01L29/76;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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