PHOTOMASK AND METHOD OF CORRECTING TRANSMISSIVITY OF PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a photomask and a method of correcting the transmissivity of a photomask.

SOLUTION: The photomask 200 includes a transparent substrate 205 and a light-shielding layer pattern 210, wherein the transparent substrate 205 has low transmissivity regions 230 at the front surface thereof. The method of correcting the transmissivity of a photomask includes steps of: doping a front surface of the transparent substrate 205 with impurity ions; forming a photoresist pattern on a semiconductor substrate and measuring critical dimensions of the photoresist pattern; and doping the entire region or a partial region of the corresponding photomask 200 with impurity ions so as to improve the dispersion of the critical dimensions or to make the average of the critical dimensions closer to the target critical dimension.

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