| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and a structure for forming strained and non-strained areas on one substrate. <P>SOLUTION: A disclosed method comprises: a process of forming a pattern of strained and relaxed materials on a substrate 101; a process of forming a strained device 129 in the strained material; and a process of forming a non-strained device 131 in the relaxed material. The strained material is silicon (Si) in a tensile or compressive state, and the relaxed material is Si in a normal state. A buffer layer 113 which is made of silicon germanium (SiGe), silicon carbon (SiC), or a similar material and has a different lattice constant/structure from that of the substrate, and a relaxed layer 111 are formed on the substrate 101. The strained material is placed in the tensile or compressive state. In another embodiment, carbon-doped silicon or germanium-doped silicon is used to form the strained material. The structure includes a multilayer substrate having strained and non-strained materials on which a pattern is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
