| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a photoelectric conversion element, and a photoelectric conversion element capable of reducing the number of times of immersion into an etching solution for etching a compound semiconductor layer, and of reducing the number of processes of the transfer and measurement of the photoelectric conversion element. <P>SOLUTION: Compound semiconductor layers (buffer layers 2, 12, base layers 3, 13, and emitter layers 4, 14) are cut, and a substrate 1, 11 is subjected to half dicing to form a half diced region 6. Further, a mesa etching region 7 containing crystal defects caused by the dicing is subjected to mesa etching with a chemical treatment. Thereafter, the photoelectric conversion element is isolated between element formation regions 9 on the substrate 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
