| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of adaptively widening or narrowing a band or increasing or decreasing current consumption over all stages of a source follower amplifier. SOLUTION: The semiconductor device has the source follower amplifier composed of a drive transistor D1 for driving an input signal, and a load transistor L1 connected to the drive transistor D1. A variable bias voltage is applied to a gate of the load transistor L1. Also, the semiconductor 1 further has a final stage second source follower amplifier composed of a final stage load transistor L2 for driving an output of the drive transistor D1, and a load circuit (load transistor L2) connected to a drive transistor D2. A bias voltage is applied for changing a resistance value of the load transistor L2 is applied to a gate of the load transistor L2. COPYRIGHT: (C)2006,JPO&NCIPI
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