SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, PROCESS FOR MANUFACTURING THE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To differentiate the film thicknesses of an insulating layer and a semiconductor layer, while enhancing the planarity of the surface of a conductor layer. SOLUTION: First single-crystal semiconductor layers 12a-12c are removed through etching by touching etching gas or etching liquid to the first single-crystal semiconductor layers 12a-12c through a groove M2 and a semiconductor substrate 11, second single-crystal semiconductor layers 13a-13c and a support 16 are thermally oxidized until the second single-crystal semiconductor layers 13a and 13b disappear thus forming an insulating layer 18 beneath the second single-crystal semiconductor layer 13c. COPYRIGHT: (C)2006,JPO&NCIPI