发明名称 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
摘要 The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
申请公布号 US2006027160(A1) 申请公布日期 2006.02.09
申请号 US20050192039 申请日期 2005.07.29
申请人 SUMIMOTO MITSUBISHI SILICON CORPORATION 发明人 SUZUKI YOUJI;SATO SATOSHI
分类号 C30B13/00 主分类号 C30B13/00
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