发明名称 Method for producing semiconductor elements
摘要 A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not the respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement ( 10 ) and also the respective associated separating zones.
申请公布号 US2006030126(A1) 申请公布日期 2006.02.09
申请号 US20050166768 申请日期 2005.06.24
申请人 INFINEON TECHNOLOGIES AG 发明人 MAUDER ANTON;SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ-JOSEF
分类号 H01L21/78;H01L21/301;H01L21/46 主分类号 H01L21/78
代理机构 代理人
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