发明名称 |
Method for producing semiconductor elements |
摘要 |
A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not the respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement ( 10 ) and also the respective associated separating zones.
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申请公布号 |
US2006030126(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050166768 |
申请日期 |
2005.06.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ-JOSEF |
分类号 |
H01L21/78;H01L21/301;H01L21/46 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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