SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A method is provided for manufacturing a highly accurate fine transistor having source/drain regions (310, 320) in an area wherein an impurity is introduced. The method includes a step of forming a gate electrode (340) on a front plane of a semiconductor substrate, a step of introducing the impurity so as to sandwich the gate electrode (340), and a step of activating the impurity. The step of introducing the impurity includes a plasma irradiation step, and prior to the activation step, a step of forming a reflection preventing film (400) is included so as to have a small light reflectance of the area wherein the impurity is introduced.