| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology by which reliability can be improved by avoiding the concentration of electric fields in the edge of a semiconductor film in a semiconductor device such as a thin film transistor. SOLUTION: A method of manufacturing a semiconductor device includes a first step of island-shaping a semiconductor film (12) on an insulating substrate (10, 11), a second step of covering the semiconductor film (12) with a first insulating film 13 while including an edge of the semiconductor film (12), a third step of opening the first insulating film (13) in an upper part of the semiconductor film 12 while avoiding the edge of the semiconductor film, a fourth step of forming a second insulating film (14) relatively thinner than the first insulating film (13) on the semiconductor film (12) at least in the opening of the insulating film (13), and a fifth step of forming an electrode wiring film (18) on the second insulating film (14). COPYRIGHT: (C)2006,JPO&NCIPI
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