| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively reduce or minimize the adverse influence of piezoelectric field without derived problems. <P>SOLUTION: An r-plane is grown in parallel to xy-plane on the upper surface of each growing section 4 growing in the non-vertical direction. Each r-plane grows until the stripe groove S is completely covered although each r-plane forms a small void 5 in the vicinity of the side wall surface 1b. Thereby, a nearly successive flat surface is finally formed. At this time, facet growth of the growing section 4 growing in the non-vertical direction is continued for 50 min under following crystal growth conditions; the crystal growth temperature is 990°C, the crystal growth rate in the direction vertical to the r-plane is 0.8 μm/min, and the ratio (V/III) of the flow rate of supplied gases is 5,000. It is important to set the facet growth conditions so as to accelerate continual and favorable facet growth. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
