SILICON EPITAXIAL WAFER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer in which a p+CZ substrate by boron doping is used and oxygen deposition of sufficient density can be formed for IG effect expression while forming width of an oxygen deposition core non-forming region is sufficiently reduced. SOLUTION: The silicon epitaxial wafer 100 is manufactured by a CZ method. A silicon epitaxial layer 2 is formed on a silicon single crystal substrate 1 where boron is doped so that resistivity becomes 0.009 to 0.012Ωcm. The silicon single crystal substrate 1 constituting the silicon epitaxial wafer 100 has an oxygen deposition core whose density is 1×1010cm-3or above. Width of the non-forming region 15 of the oxygen deposition core formed on a surface layer part becoming an interface between the silicon single crystal substrate 1 and the silicon epitaxial layer 2 is 0 to 10μm. COPYRIGHT: (C)2006,JPO&NCIPI