SOLID-STATE IMAGE PICKUP ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a solid-state image pickup element that can suppress the occurrence of afterimage phenomena even when the area of the light sensitive region of each light receiving section is increased. SOLUTION: Each light receiving section is provided with an n--type second semiconductor region formed in a region surrounding a prescribed region A1 on a p-type first semiconductor region 11, a p+-type third semiconductor region 13 formed on the second semiconductor region 12 and its circumference with an interval from the prescribed region A1, and an n+-type fourth semiconductor region 14 formed in the prescribed region A1 with an interval from the second semiconductor region 12. The light receiving section is also provided with a gate electrode 16 provided between the second and fourth semiconductor regions 12 and 14 on the first semiconductor region 11. The first, second, and third semiconductor regions 11, 12, and 13 constitute a flush type photodiode. In addition, the first, second, and fourth semiconductor regions 11, 12, and 14 and gate electrode 16 constitute a field effect transistor. COPYRIGHT: (C)2006,JPO&NCIPI