| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an ion implantation mask, having steep side faces whose patterns, are less likely to be tapered. SOLUTION: A silicon dioxide film 21x as a first film and an Al film 22x as a second film are successively deposited on a substrate, and a resist mask Re1 is formed on the Al film 22x. The resist mask Re1 is used as an etching mask, the Al film 22x is patterned, an Al mask 22 as an intermediate mask is formed, the resist mask Re1 and the Al mask 22 are used as an etching mask; and the silicon dioxide film 21x is patterned so that a silicon dioxide mask 21 can be formed as an ion implantation mask. Afterwards, the resist mask Re1 and the Al mask 22 are removed, and ion is injected into a high resistance SiC layer 2 at a high temperature of 150°C or higher, by using the silicon dioxide mask 21, so that a p-well region 3 being an impurity diffused layer can be formed. COPYRIGHT: (C)2006,JPO&NCIPI
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