| 摘要 |
PROBLEM TO BE SOLVED: To form an SiC semiconductor substrate having a low defect density. SOLUTION: A porous layer is formed on the surface of a base wafer of an SiC single crystal (steps S1, S2), and then each pore in the surface of the porous layer is closed by performing annealing (step S3). Thereafter, a homoepitaxial layer of SiC is formed on the surface of the porous layer having closed pores (step S4), and finally, the homoepitaxial layer is separated from the base wafer side by cutting the porous layer part (step S5). The defect density of the homoepitaxial layer is drastically reduced by forming the homoepitaxial layer after closing the pores in the surface of the porous layer. The production yields of various devices can be improved by using the homoepitaxial layer as the SiC semiconductor substrate of each device. COPYRIGHT: (C)2006,JPO&NCIPI
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