发明名称 |
High mobility CMOS circuits |
摘要 |
Semiconductor structure formed on a substrate and process of forming the semiconductor. The semiconductor includes a plurality of field effect transistors having a first portion of field effect transistors (FETS) and a second portion of field effect transistors. A first stress layer has a first thickness and is configured to impart a first determined stress to the first portion of the plurality of field effect transistors. A second stress layer has a second thickness and is configured to impart a second determined stress to the second portion of the plurality of field effect transistors.
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申请公布号 |
US2006027868(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050244291 |
申请日期 |
2005.10.06 |
申请人 |
IBM CORPORATION |
发明人 |
DORIS BRUCE B.;GLUSCHENKOV OLEG G.;ZHU HUILONG |
分类号 |
H01L27/12;H01L21/8238;H01L27/01 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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