发明名称 METHOD OF DICING A WAFER
摘要 A wafer supported by a carrier is provided where a bonding layer and an extendable film are disposed in between the carrier and the wafer. Then, a photoresist pattern is formed on a surface of the wafer to define scribe lines of the wafer. Following that, an anisotropic etching process is performed to remove the wafer uncovered by the photoresist pattern to form a plurality of dies. Finally the bonding layer is separated from the carrier.
申请公布号 US2006030130(A1) 申请公布日期 2006.02.09
申请号 US20040711997 申请日期 2004.10.19
申请人 SHAO SHIH-FENG;YANG CHEN-HSIUNG;PENG HSIN-YA 发明人 SHAO SHIH-FENG;YANG CHEN-HSIUNG;PENG HSIN-YA
分类号 H01L21/78;H01L21/50;H01L21/68 主分类号 H01L21/78
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