发明名称 |
METHOD OF DICING A WAFER |
摘要 |
A wafer supported by a carrier is provided where a bonding layer and an extendable film are disposed in between the carrier and the wafer. Then, a photoresist pattern is formed on a surface of the wafer to define scribe lines of the wafer. Following that, an anisotropic etching process is performed to remove the wafer uncovered by the photoresist pattern to form a plurality of dies. Finally the bonding layer is separated from the carrier.
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申请公布号 |
US2006030130(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20040711997 |
申请日期 |
2004.10.19 |
申请人 |
SHAO SHIH-FENG;YANG CHEN-HSIUNG;PENG HSIN-YA |
发明人 |
SHAO SHIH-FENG;YANG CHEN-HSIUNG;PENG HSIN-YA |
分类号 |
H01L21/78;H01L21/50;H01L21/68 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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