Elektromagnetische Umwandler

摘要

Electromagnetic transducers are provided comprising a conductive nitrogen-doped p-type IIB-VIA semiconductor film grown by molecular beam epitaxy, comprising Zn and Se, and doped with neutral atomic nitrogen generated by an RF plasma discharge free-radical source, the film having a net acceptor concentration greater than about 5x10<15>cm<-3> and exhibiting an electrical resistivity less than 15 ohm centimeters, the transducer having a room temperature (300 K) electroluminescent spectrum with a maximum intensity at wavelengths of less than 550 nanometers, and being useful in light emitting diodes and laser diodes.