<p>Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).</p>
申请公布号
WO2006014152(A1)
申请公布日期
2006.02.09
申请号
WO2004US21240
申请日期
2004.07.01
申请人
MIDWEST RESEARCH INSTITUTE;SOPORI, BHUSHAN, L.;HAMBARIAN, ARTAK