| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processor and a processing method of an efficient high dielectric constant film. <P>SOLUTION: The processor performs prescribed processing on a high dielectric constant film of a CVD (Chemical Vapor Deposition) processing, an organic CVD processing or an MO-CVD (Metal Organic Chemical Vapor Deposition) processing. Oxidation reaction is performed with impurity of the high dielectric constant film by using minus ions. Namely, the ions react with organic matter such as carbon left in the film and they are removed. Since the minus ions are efficiently and selectively (preferentially) combined with an oxygen defect in the oxide high dielectric constant film, oxidation is suppressed much more by controlling an amount of the oxidized ions. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
