| 摘要 |
PROBLEM TO BE SOLVED: To keep high voltage resistance of a semiconductor element without enlarging an area of a terminal. SOLUTION: In a terminal, a trench 4 reaches an n<SP>+</SP>layer 1 through an n<SP>-</SP>epitaxial layer 2. The trench 4 is filled with silica particles. A silicon oxide film 5b is formed above the trench 4, and a field plate 6a extending from an electrode metal 6 of a semiconductor element formed in an element region is formed on this silicon oxide film 5b. COPYRIGHT: (C)2006,JPO&NCIPI
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