发明名称 |
Method to produce highly doped polysilicon thin films |
摘要 |
The present invention describes a method of forming a highly doped polysilicon film. According to an embodiment of the present invention, a first silicon film is formed on a substrate. The first silicon film is then doped. Next, a second silicon film is formed on the doped first silicon film. The second silicon film is then doped.
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申请公布号 |
US2006030109(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20040912632 |
申请日期 |
2004.08.04 |
申请人 |
RANADE PUSHKAR;BAN IBRAHIM |
发明人 |
RANADE PUSHKAR;BAN IBRAHIM |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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