IONIZING RADIATION SENSOR

摘要

The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate of n-type conductivity, on whose front side there are p-regions; layer from SiO2; aluminum metallization; and a passivating layer. P-region, located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions in the form of circular elements are located in the inactive region on the perimeter of the substrate around the central p-region and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter.

主权项

1. An ionizing radiation sensor in a form of a p-i-n structure, containing:
a high-resistance silicon substrate of n-type conductivity, on the front working side of which there are p-regions and a masking coating of SiO2; aluminum metallization; passivating layer, on a back side of the substrate, there are a high-doped layer of an n-region and an aluminum metallization; wherein at least one p-region is located in a central part of the substrate and occupies most of the surface area, forming an active region of the sensor, and at least two p-regions in a form of circular elements are located in an inactive region on a perimeter of the substrate with a possibility to decrease a surface current value and ensure a smooth voltage drop from the active region to the substrate perimeter; in the SiO2 coating layer, there are windows to ensure a contact between the aluminum and the p-region; in the passivating layer, there are windows for connection of leads.