发明名称 Semiconductor device and method fabricating the same
摘要 A semiconductor device includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate; a plurality of copper interconnections provided on the same level in the insulating film. The copper interconnection includes: a first copper interconnection having a relatively narrow width; and a second copper interconnection having a relatively wide width. The first copper interconnection has the top surface thereof principally composed of copper, and the second copper interconnection has the top surface thereof principally composed of copper.
申请公布号 US2006027931(A1) 申请公布日期 2006.02.09
申请号 US20050185937 申请日期 2005.07.21
申请人 NEC ELECTRONICS CORPORATION 发明人 TAKEWAKI TOSHIYUKI;KUNISHIMA HIROYUKI
分类号 H01L23/48;H01L23/52;H01L23/58 主分类号 H01L23/48
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