发明名称 |
Semiconductor device and method fabricating the same |
摘要 |
A semiconductor device includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate; a plurality of copper interconnections provided on the same level in the insulating film. The copper interconnection includes: a first copper interconnection having a relatively narrow width; and a second copper interconnection having a relatively wide width. The first copper interconnection has the top surface thereof principally composed of copper, and the second copper interconnection has the top surface thereof principally composed of copper.
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申请公布号 |
US2006027931(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
US20050185937 |
申请日期 |
2005.07.21 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TAKEWAKI TOSHIYUKI;KUNISHIMA HIROYUKI |
分类号 |
H01L23/48;H01L23/52;H01L23/58 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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