SEMICONDUCTOR DEVICE

摘要

The present invention is to provide a semiconductor device capable of enhancing performances by increasing width effects via channel shape adjustment of a Fin Field Effect Transistor (FinFET). The semiconductor device comprises: a first pin-type pattern including a first side wall and a second side wall facing each other; and a field insulation film coming into contact with a part of the first pin-type pattern. The first pin-type pattern comprises: a lower part coming into contact with the field insulation film; an upper part not coming into contact with the field insulation film; a first boundary line between the lower part of the first pin-type pattern and the upper part of the first pin-type pattern; and a first pin center line perpendicular to the first boundary line and coming into contact with the uppermost part of the upper part. Based on the first pin center line, the first side wall in the upper part of the first pin-type pattern and the second side wall in the upper part of the first pin-type pattern are asymmetric.