发明名称 Integrated circuit devices including passive device shielding structures and methods of forming the same
摘要 Integrated circuit devices include a semiconductor substrate and a flux line generating passive electronic element on the semiconductor substrate. A dummy gate structure is arranged on the semiconductor substrate in a region below the passive electronic element. The dummy gate includes a plurality of segments, each segment including a first longitudinally extending part and a second longitudinally extending part. The second longitudinally extending part extends at an angle from an end of the first longitudinally extending part. Ones of the segments extend at a substantially same angle and are arranged displaced from each other in an adjacent nested relationship.
申请公布号 US2006030115(A1) 申请公布日期 2006.02.09
申请号 US20050042007 申请日期 2005.01.25
申请人 CHUNG CHULHO 发明人 CHUNG CHULHO
分类号 H01L29/00;H01L21/20;H01L21/82;H01L21/8238 主分类号 H01L29/00
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