| 发明名称 |
Beta control using a rapid thermal oxidation |
| 摘要 |
A method of forming semiconductor device. treating a surface of a substrate to produce a discontinuous growth of a material on the surface through rapid thermal oxidation of the substrate surface at a temperature of less than about 700° C.
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| 申请公布号 |
US2006030099(A1) |
申请公布日期 |
2006.02.09 |
| 申请号 |
US20050246298 |
申请日期 |
2005.10.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;COOLBAUGH DOUGLAS D.;WILLIAMS STEVE S. |
| 分类号 |
H01L21/324;H01L21/8238;H01L21/3205;H01L21/331;H01L23/58 |
主分类号 |
H01L21/324 |
| 代理机构 |
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