PROCESS FOR PRODUCING IC CHIP

摘要

A process for producing an IC chip as thin as 50 µm or less, such as an IC chip having a thickness of 25-30 µm, with high productivity. The process for producing an IC chip comprises a step 1 for fixing a wafer to a supporting plate by bonding a surface of a double-sided adhesive tape containing a gas generating agent to the wafer, which double-sided adhesive tape contains the gas generating agent that generates a gas when irradiated with light in at least one adhesive layer on either side, a step 2 for grinding the wafer while keeping it secured to the supporting plate through the double-sided adhesive tape, a step 3 for irradiating the double-sided adhesive tape with light, and a step 4 for separating the double-sided adhesive tape from the wafer. In this process, the gas discharge rate from the double-sided adhesive tape in the step 3 is not less than 5µL/cm