发明名称 |
SEMICONDUCTOR ELEMENT WITH A PASSIVATION LAYER AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>A Semiconductor component that contains AlxGayIn1-x-yAszSb1-z, whereby the parameters x, y, and z are selected such that a bandgap of less than 350 meV is achieved, whereby it features a mesa-structuring and a passivation layer containing AlnGa1-nAsmSb1-m is applied at least partially on at least one lateral surface of the structuring, and the parameter n is selected in the range of 0.4 to 1 and the parameter m in the range of 0 to 1.</p> |
申请公布号 |
CA2572691(A1) |
申请公布日期 |
2006.02.09 |
申请号 |
CA20052572691 |
申请日期 |
2005.07.25 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
FUCHS, FRANK;REHM, ROBERT;WALTHER, MARTIN |
分类号 |
H01L23/29;H01L31/0304;H01L31/103 |
主分类号 |
H01L23/29 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|