发明名称 |
BASE LINE MANAGEMENT METHOD, EXPOSING METHOD, EXPOSURE APPARATUS, AND PROGRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To enable base line management with high throughput while accuracy of the base line is maintained. <P>SOLUTION: A fluctuation amount of base line of a mark detecting system is estimated with an interrupting process on the basis of the information about irradiation of the lighting beam radiated to a reticle on which a pattern is formed and the predetermined model formula. On the occasion that the exposing process is conducted continuously to a plurality of wafers, the standard base line is measured previously before start of exposure of every other predetermined number of sheets of the wafers (step 124). In the base line measuring interval, the base line estimating value is calculated in higher accuracy on the basis of amount of fluctuation of estimated base line and the standard base line in every timing immediately before the start of exposure of each shot region on the wafer without measurement of actual base line (step 149). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006041015(A) |
申请公布日期 |
2006.02.09 |
申请号 |
JP20040215600 |
申请日期 |
2004.07.23 |
申请人 |
NIKON CORP |
发明人 |
ISHIKAWA JUN;HAMAYA MASATO |
分类号 |
H01L21/027;G01B11/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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