| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric ceramic composition for an electronic device capable of controlling the temperature coefficient τf to a positive direction while keeping the high Qf value and the dielectric constant of a Ba(Mg<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>-based material and to provide its producing method. <P>SOLUTION: A Ba[(MgZn)<SB>1/3</SB>Ta<SB>2/3</SB>]O<SB>3</SB>-based dielectric ceramic composition where Zn is added to a Ba(Mg<SB>1/3</SB>Ta<SB>2/3</SB>)O<SB>3</SB>-based dielectric ceramic composition is sintered at 1,570°C or higher and in a sintering time of 5 hours or more and ZnO in the composition is volatilized and then BaTa<SB>2</SB>O<SB>6</SB>doped with Zn and/or Mg is deposited. The temperature coefficient τf is controlled to the positive direction while keeping the Qf value and the dielectric constant by controlling the volume concentration of BaTa<SB>2</SB>O<SB>6</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
