发明名称 MEMORY CARD AND NONVOLATILE STORAGE
摘要 <P>PROBLEM TO BE SOLVED: To significantly improve the reliability of data by detecting a writing error of data by writing interruption or the like in a memory card. <P>SOLUTION: At the time of writing data to the memory card, a pattern addition part 10 generates and adds an additive pattern to writing data to store the data in a flash memory. The pattern addition part 10 assigns patterns corresponding to a plurality of set threshold voltages to nonvolatile memory cells, and adds a pattern corresponding to the threshold voltage of the last writing in the data writing to a data part as an additive pattern. At the time of reading data, a pattern detection part 11 compares the additive pattern of the read data with the additive pattern added by the pattern addition part 10, and when the both are matched, predetermined processing is performed to the data as valid data. When the both are not matched, the processing is ended as error. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006040013(A) 申请公布日期 2006.02.09
申请号 JP20040220037 申请日期 2004.07.28
申请人 RENESAS TECHNOLOGY CORP 发明人 SHIBUYA HIROFUMI;HARA IKUO
分类号 G06F12/16;G06K19/07;G11C16/02 主分类号 G06F12/16
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