| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently form a substrate through hole on a semiconductor integrated circuit chip, in a short time. <P>SOLUTION: A diffusion layer 15 is formed on the surface of a chip and connected with a wire 14. While the diameter on the bottom of the through hole is controlled so that the center of the bottom of the through hole coincides with the center of the connection between the diffusion layer 15 and the wire 14 and that the diameter on the bottom of the through hole is equal to or slightly larger than the diameter of the joint of the wire 14 and the diffusion layer 15, dry etching is started from the rear face 13 of the semiconductor integrated circuit chip to form the through hole 16. It is sufficient that only a gas for selectively etching silicon be used in dry etching in this semiconductor chip structure. Thus, the etching gas need not be replaced with another kind of etching gas during the etching process, thereby the substrate is formed efficiently of through holes in a short time. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
