发明名称 CMP ABRASIVE AND POLISHING METHOD OF SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an abrasive along with a polishing method, for efficient, fast, and even polishing and easy process control, relating to a CMP technology for planarizing an interlayer insulating film, BPSG film, insulating film for shallow-trench isolation. <P>SOLUTION: The CMP abrasive contains cerium oxide particles, dispersants, water-soluble polymers, and water. The water-soluble polymer uses at least persulfuric acid and its base as polymerization initiator, to contain a polymer, in which a monomer containing at least carboxylic acid having unsaturated double bonds or its base is polymerized. The mixing amount of the polymer of water-soluble polymer preferably is 0.01-5 pts.wt. with respect to CMP abrasive 100 pts.wt., and the weight-average molecular weight of the polymer is 200-50,000. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006041034(A) 申请公布日期 2006.02.09
申请号 JP20040216046 申请日期 2004.07.23
申请人 HITACHI CHEM CO LTD 发明人 FUKAZAWA MASATO;KOYAMA NAOYUKI;OTSUKI HIROTO;KURATA YASUSHI;HAGA KOJI;AKUTSU TOSHIAKI
分类号 H01L21/304;B24B37/00 主分类号 H01L21/304
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