| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which reduces a substrate leakage current and a dielectric loss without impairing heat sink characteristic and to provide a method of manufacturing the same. SOLUTION: In the nitride semiconductor device which includes a silicon substrate having a surface and backside, and a nitride semiconductor layer provided on the surface of the silicon substrate, a high heat conductive insulating material layer is provided on the backside of the silicon substrate. Further, the method of manufacturing the nitride semiconductor device includes the steps of dipping the silicon substrate formed with the nitride semiconductor layer in a solution and precipitating the high heat conductive insulating substance layer on the backside of the silicon substrate by an electro-chemical method. COPYRIGHT: (C)2006,JPO&NCIPI
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